Analog Filamentary Conductive-Metal-Oxide (CMO)/HfOx ReRAM device noise model for inference #702
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soykilian
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PabloCarmona
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Dec 26, 2024
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Thank you very much for your addition @soykilian!!! Please review the comments and address the changes requested. Also can you please add an example in the examples folder about an application of use for this case?
Again thanks for your effort and contribution to the project! :)
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
Signed-off-by: soykilian <[email protected]>
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Description
A new noise model for inference assessment has been included in the ReRAM noise models, in addition to the statistical noise model from Wang 2022 (Nature). The presented model is inferred from novel Analog AFilamentary CMO/HfOx ReRAM devices.
The noise model accounts for the following effects from experimental characterization: